FQP17N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Packaging :

Tube

Continuous Drain Current (ID) :

16A

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

5 Weeks

Fall Time (Typ) :

105 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

400V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.7mm

Mount :

Through Hole

Power Dissipation-Max :

170W Tc

Voltage - Rated DC :

400V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Weight :

1.8g

Threshold Voltage :

5V

Height :

9.4mm

Number of Pins :

3

Element Configuration :

Single

Nominal Vgs :

5 V

Published :

2013

Number of Elements :

1

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Power Dissipation :

170W

Rise Time :

185ns

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Length :

10.1mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Resistance :

270mOhm

Turn-Off Delay Time :

90 ns

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Turn On Delay Time :

40 ns

Current Rating :

16A

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pulsed Drain Current-Max (IDM) :

64A

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

270m Ω @ 8A, 10V