FQP17N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation :

170W

Drain to Source Breakdown Voltage :

400V

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

16A

Rds On (Max) @ Id, Vgs :

270m Ω @ 8A, 10V

Threshold Voltage :

5V

Factory Lead Time :

5 Weeks

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Turn-Off Delay Time :

90 ns

Length :

10.1mm

Fall Time (Typ) :

105 ns

Number of Pins :

3

Resistance :

270mOhm

Current - Continuous Drain (Id) @ 25°C :

16A Tc

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Number of Terminations :

3

Turn On Delay Time :

40 ns

Pbfree Code :

yes

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

400V

FET Type :

N-Channel

Element Configuration :

Single

Current Rating :

16A

Vgs (Max) :

±30V

Height :

9.4mm

Nominal Vgs :

5 V

Lead Free :

Lead Free

Weight :

1.8g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Number of Elements :

1

Power Dissipation-Max :

170W Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tube

Rise Time :

185ns

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Pulsed Drain Current-Max (IDM) :

64A