FQP16N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

16A

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

16.3mm

Voltage - Rated DC :

250V

FET Type :

N-Channel

Number of Pins :

3

Packaging :

Tube

Length :

10.67mm

Pulsed Drain Current-Max (IDM) :

64A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Factory Lead Time :

5 Weeks

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation :

50W

JESD-609 Code :

e3

Fall Time (Typ) :

75 ns

Avalanche Energy Rating (Eas) :

560 mJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Published :

2013

Element Configuration :

Single

Width :

4.7mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

45 ns

Series :

QFET®

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

250V

Rds On (Max) @ Id, Vgs :

230m Ω @ 8A, 10V

Turn On Delay Time :

17 ns

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Power Dissipation-Max :

142W Tc

Vgs (Max) :

±30V

Weight :

1.8g

Lead Free :

Lead Free

Current Rating :

16A

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rise Time :

140ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V