FQP16N15

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

108W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

16.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

16.4A

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

160m Ω @ 8.2A, 10V

Surface Mount :

No

Series :

QFET®

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

230 mJ

Drain to Source Voltage (Vdss) :

150V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.16Ohm

Number of Elements :

1

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

65.6A

Transistor Application :

SWITCHING

Packaging :

Tube

JESD-609 Code :

e3

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±25V

Package / Case :

TO-220-3