FQP15P12
- Mfr.Part #
- FQP15P12
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 120V 15A TO220-3
- Stock
- 3,320
- In Stock :
- 3,320
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Turn On Delay Time :
- 15 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 15A
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 100W Tc
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- -120V
- Power Dissipation :
- 100W
- Factory Lead Time :
- 5 Weeks
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Current Rating :
- -15A
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.2Ohm
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 80 ns
- Rise Time :
- 100ns
- Weight :
- 1.8g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 120V
- Drain to Source Breakdown Voltage :
- -120V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 80 ns
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 7.5A, 10V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 60A
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- FQP15P12
FQP15P12 Documents

P-Channel Tube 200m Ω @ 7.5A, 10V ±30V 1100pF @ 25V 38nC @ 10V 120V TO-220-3
FQP15P12 Description
The ON Semiconductor FQP15P12 P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
FQP15P12 Features
-
-15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A
-
Low Gate Charge (Typ. 29 nC)
-
Low Crss (Typ. 110 pF)
-
100% Avalanche Tested
-
175°C Maximum Junction Temperature Rating
FQP15P12 Applications
-
Switched Mode Power Supplies
-
Audio Amplifier
-
DC Motor Control
-
Variable Switching Power Applications
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