FQP15P12

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

100ns

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

FET Type :

P-Channel

Package / Case :

TO-220-3

Element Configuration :

Single

Power Dissipation-Max :

100W Tc

Drain-source On Resistance-Max :

0.2Ohm

Drain to Source Breakdown Voltage :

-120V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

120V

Continuous Drain Current (ID) :

15A

Number of Terminations :

3

Power Dissipation :

100W

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Factory Lead Time :

5 Weeks

Series :

QFET®

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

-120V

Weight :

1.8g

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

60A

Fall Time (Typ) :

80 ns

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

200m Ω @ 7.5A, 10V

Mounting Type :

Through Hole

Packaging :

Tube

Current Rating :

-15A

Turn-Off Delay Time :

80 ns