FQP14N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

22 ns

Fall Time (Typ) :

70 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

147W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

14.4A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

45 ns

Drain to Source Breakdown Voltage :

300V

Series :

QFET®

Length :

10.1mm

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

57.6A

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

300V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vgs (Max) :

±30V

JESD-609 Code :

e3

Weight :

1.8g

Mount :

Through Hole

Height :

9.4mm

Power Dissipation :

147W

Rise Time :

145ns

Packaging :

Tube

Drain-source On Resistance-Max :

0.29Ohm

Avalanche Energy Rating (Eas) :

600 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Width :

4.7mm

Package / Case :

TO-220-3

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Factory Lead Time :

11 Weeks

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

14.4A Tc

Continuous Drain Current (ID) :

14.4A

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V