FQP14N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Continuous Drain Current (ID) :

14.4A

Package / Case :

TO-220-3

Length :

10.1mm

Rise Time :

145ns

Factory Lead Time :

11 Weeks

Height :

9.4mm

ECCN Code :

EAR99

Vgs (Max) :

±30V

Pbfree Code :

yes

Weight :

1.8g

Pulsed Drain Current-Max (IDM) :

57.6A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

14.4A

Lead Free :

Lead Free

Width :

4.7mm

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.2A, 10V

Fall Time (Typ) :

70 ns

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.29Ohm

Turn On Delay Time :

22 ns

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

14.4A Tc

Turn-Off Delay Time :

45 ns

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

600 mJ

Mounting Type :

Through Hole

Voltage - Rated DC :

300V

Number of Elements :

1

Element Configuration :

Single

JESD-609 Code :

e3

Power Dissipation-Max :

147W Tc

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Number of Terminations :

3

Drain to Source Breakdown Voltage :

300V

Published :

2000

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

147W