FQP14N15
- Mfr.Part #
- FQP14N15
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 14.4A TO220-3
- Stock
- 22,645
- In Stock :
- 22,645
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 57.6A
- Current - Continuous Drain (Id) @ 25°C :
- 14.4A Tc
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Pin Count :
- 3
- Power Dissipation-Max :
- 104W Tc
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 7.2A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 150V
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 150V
- Reach Compliance Code :
- Unknown
- Series :
- QFET®
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±25V
- Terminal Finish :
- Tin
- Drain-source On Resistance-Max :
- 0.21Ohm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 715pF @ 25V
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Drain Current-Max (Abs) (ID) :
- 14.4A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Packaging :
- Tube
- Datasheets
- FQP14N15
FQP14N15 Documents

N-Channel Tube 210m Ω @ 7.2A, 10V ±25V 715pF @ 25V 23nC @ 10V 150V TO-220-3
FQP14N15 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 715pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 14.4A.A maximum pulsed drain current of 57.6A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FQP14N15 Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 57.6A.
a 150V drain to source voltage (Vdss)
FQP14N15 Applications
There are a lot of Rochester Electronics, LLC
FQP14N15 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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