FQP13N50C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Height :

9.4mm

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Turn-Off Delay Time :

130 ns

Rise Time :

100ns

REACH SVHC :

No SVHC

Resistance :

480mOhm

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4 V

Pulsed Drain Current-Max (IDM) :

52A

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.1mm

Published :

2013

Power Dissipation :

195W

Series :

QFET®

Weight :

4.535924g

Dual Supply Voltage :

500V

Number of Terminations :

3

Mount :

Through Hole

Current Rating :

13A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

Transistor Element Material :

SILICON

Turn On Delay Time :

25 ns

JESD-609 Code :

e3

Packaging :

Tube

Fall Time (Typ) :

100 ns

Power Dissipation-Max :

195W Tc

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

860 mJ

Vgs (Max) :

±30V

Width :

4.7mm

Voltage - Rated DC :

500V

Termination :

Through Hole

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

13A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

480m Ω @ 6.5A, 10V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Number of Elements :

1