FQP13N50C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Contact Plating :

Tin

Number of Pins :

3

Mounting Type :

Through Hole

Width :

4.7mm

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Power Dissipation :

195W

FET Type :

N-Channel

ECCN Code :

EAR99

Published :

2013

Length :

10.1mm

Turn On Delay Time :

25 ns

Rds On (Max) @ Id, Vgs :

480m Ω @ 6.5A, 10V

Rise Time :

100ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

500V

Number of Elements :

1

Weight :

4.535924g

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Fall Time (Typ) :

100 ns

Turn-Off Delay Time :

130 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

4 V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Termination :

Through Hole

Lead Free :

Lead Free

Package / Case :

TO-220-3

Number of Terminations :

3

JESD-609 Code :

e3

Resistance :

480mOhm

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

13A

Dual Supply Voltage :

500V

Continuous Drain Current (ID) :

13A

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

52A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

195W Tc

Mount :

Through Hole

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

860 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

9.4mm

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V