FQP13N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Nominal Vgs :

5 V

Mount :

Through Hole

Number of Terminations :

3

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Length :

6.35mm

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

85 ns

Package / Case :

TO-220-3

Turn-Off Delay Time :

100 ns

Power Dissipation :

170W

Weight :

1.8g

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Resistance :

430mOhm

Published :

2013

Continuous Drain Current (ID) :

12.5A

Turn On Delay Time :

40 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

430m Ω @ 6.25A, 10V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Voltage - Rated DC :

500V

Threshold Voltage :

5V

Pulsed Drain Current-Max (IDM) :

50A

Width :

6.35mm

JESD-609 Code :

e3

Height :

6.35mm

FET Type :

N-Channel

Element Configuration :

Single

Power Dissipation-Max :

170W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

500V

Factory Lead Time :

5 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Rise Time :

140ns

Current Rating :

12.5A

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

12.5A Tc

Packaging :

Tube

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Series :

QFET®

Drain to Source Breakdown Voltage :

500V