FQP13N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Width :

4.7mm

REACH SVHC :

No SVHC

Weight :

1.8g

Current Rating :

12.8A

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

22 ns

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs (Max) :

±20V

Height :

9.4mm

Number of Elements :

1

Number of Pins :

3

Resistance :

180mOhm

Rise Time :

220ns

Mount :

Through Hole

Turn On Delay Time :

7.5 ns

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

100V

Series :

QFET®

ECCN Code :

EAR99

Pbfree Code :

yes

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

65W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

72 ns

Published :

2013

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

12.8A Tc

Threshold Voltage :

2V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Additional Feature :

FAST SWITCHING

Avalanche Energy Rating (Eas) :

95 mJ

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Qualification Status :

Not Qualified

Length :

10.1mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

12.8A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Rds On (Max) @ Id, Vgs :

180m Ω @ 6.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

FET Type :

N-Channel

Power Dissipation :

65W

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)