FQP13N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Pbfree Code :

yes

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

25V

Voltage - Rated DC :

100V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Packaging :

Tube

Vgs (Max) :

±25V

Drain to Source Breakdown Voltage :

100V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

12.8A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Height :

9.4mm

Turn-Off Delay Time :

20 ns

Length :

10.1mm

Threshold Voltage :

4V

Current Rating :

12.8A

Power Dissipation :

65W

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

5 Weeks

Power Dissipation-Max :

65W Tc

Rise Time :

55ns

Published :

2013

Number of Terminations :

3

Resistance :

180mOhm

Avalanche Energy Rating (Eas) :

95 mJ

Package / Case :

TO-220-3

Contact Plating :

Tin

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Continuous Drain (Id) @ 25°C :

12.8A Tc

Lead Free :

Lead Free

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

180m Ω @ 6.4A, 10V

Width :

4.7mm

Mount :

Through Hole

Radiation Hardening :

No

Turn On Delay Time :

5 ns

Series :

QFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

1.8g