FQP13N06
- Mfr.Part #
- FQP13N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 13A TO220-3
- Stock
- 4,663
- In Stock :
- 4,663
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Terminal Finish :
- MATTE TIN
- Power Dissipation-Max :
- 45W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 6.5A, 10V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 60V
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Additional Feature :
- FAST SWITCHING
- Avalanche Energy Rating (Eas) :
- 85 mJ
- Qualification Status :
- COMMERCIAL
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.135Ohm
- Pulsed Drain Current-Max (IDM) :
- 52A
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 13A
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FQP13N06

N-Channel Tube 135m Ω @ 6.5A, 10V ±25V 310pF @ 25V 7.5nC @ 10V 60V TO-220-3
FQP13N06 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 85 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 310pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 13A.There is a peak drain current of 52A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQP13N06 Features
the avalanche energy rating (Eas) is 85 mJ
based on its rated peak drain current 52A.
a 60V drain to source voltage (Vdss)
FQP13N06 Applications
There are a lot of Rochester Electronics, LLC
FQP13N06 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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