FQP13N06
- Mfr.Part #
- FQP13N06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 13A TO220-3
- Stock
- 30,176
- In Stock :
- 30,176
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.135Ohm
- Vgs (Max) :
- ±25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 13A
- DS Breakdown Voltage-Min :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Reach Compliance Code :
- Unknown
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Pulsed Drain Current-Max (IDM) :
- 52A
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- MATTE TIN
- Additional Feature :
- FAST SWITCHING
- Series :
- QFET®
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 85 mJ
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 45W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Pin Count :
- 3
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 6.5A, 10V
- Datasheets
- FQP13N06
FQP13N06 Documents

N-Channel Tube 135m Ω @ 6.5A, 10V ±25V 310pF @ 25V 7.5nC @ 10V 60V TO-220-3
FQP13N06 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 85 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 310pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 13A.There is a peak drain current of 52A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQP13N06 Features
the avalanche energy rating (Eas) is 85 mJ
based on its rated peak drain current 52A.
a 60V drain to source voltage (Vdss)
FQP13N06 Applications
There are a lot of Rochester Electronics, LLC
FQP13N06 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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