FQP12P20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

470m Ω @ 5.75A, 10V

Resistance :

470mOhm

Lead Free :

Lead Free

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-200V

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

-200V

Vgs (Max) :

±30V

Turn On Delay Time :

20 ns

Power Dissipation-Max :

120W Tc

Threshold Voltage :

-5V

Mount :

Through Hole

Termination :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation :

120W

Weight :

1.8g

Rise Time :

195ns

Pbfree Code :

yes

Radiation Hardening :

No

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Element Configuration :

Single

Length :

10.1mm

Height :

9.4mm

Series :

QFET®

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Pulsed Drain Current-Max (IDM) :

46A

Number of Pins :

3

Number of Elements :

1

Nominal Vgs :

-5 V

JESD-609 Code :

e3

Lead Pitch :

2.54mm

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain to Source Breakdown Voltage :

-200V

Fall Time (Typ) :

60 ns

Width :

4.7mm

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

11.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

5 Weeks

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Turn-Off Delay Time :

40 ns

Current Rating :

-11.5A

ECCN Code :

EAR99

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain to Source Voltage (Vdss) :

200V