FQP12N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

155 ns

Rise Time :

85ns

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 25V

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Fall Time (Typ) :

90 ns

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Number of Elements :

1

Packaging :

Tube

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Pbfree Code :

yes

FET Type :

N-Channel

Termination :

Through Hole

ECCN Code :

EAR99

Length :

10.1mm

Pulsed Drain Current-Max (IDM) :

48A

Dual Supply Voltage :

600V

Avalanche Energy Rating (Eas) :

870 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.7mm

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

30 ns

Height :

9.4mm

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

225W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Voltage - Rated DC :

600V

Mount :

Through Hole

Element Configuration :

Single

Transistor Element Material :

SILICON

Number of Pins :

3

Resistance :

650mOhm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

12A

Power Dissipation-Max :

225W Tc

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

Threshold Voltage :

4V

Qualification Status :

Not Qualified

Current Rating :

12A

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Package / Case :

TO-220-3