FQD4P40TM
- Mfr.Part #
- FQD4P40TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 1,238
- In Stock :
- 1,238
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 3.1 Ω @ 1.35A, 10V
- Voltage - Rated DC :
- -400V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Series :
- QFET®
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 400V
- Turn On Delay Time :
- 13 ns
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- -400V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Rise Time :
- 55ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- FET Type :
- P-Channel
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 37 ns
- Packaging :
- Tape and Reel (TR)
- Weight :
- 260.37mg
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- Avalanche Energy Rating (Eas) :
- 260 mJ
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current Rating :
- -2.7A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 2.7A
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 35 ns
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Power Dissipation :
- 2.5W
- Case Connection :
- DRAIN
- Datasheets
- FQD4P40TM

P-Channel Tape & Reel (TR) 3.1 Ω @ 1.35A, 10V ±30V 680pF @ 25V 23nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4P40TM Description
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on a complimentary half-bridge.
FQD4P40TM Features
-
-2.7 A, -400 V, RDS(on) = 3.1 ? (Max.) @ VGS = -10 V, ID = -1.35 A
-
Low Gate Charge (Typ. 18 nC)
-
Low Crss (Typ. 11 pF)
-
100% Avalanche Tested
FQD4P40TM Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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