FQD4N50TF
- Mfr.Part #
- FQD4N50TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.6A DPAK
- Stock
- 9,408
- In Stock :
- 9,408
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- -
- Technology :
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Supplier Device Package :
- TO-252, (D-Pak)
- Power Dissipation (Max) :
- 2.5W (Ta), 45W (Tc)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs :
- 2.7Ohm @ 1.3A, 10V
- Series :
- QFET®
- Drain to Source Voltage (Vdss) :
- 500 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package :
- Bulk
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 460 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs :
- 13 nC @ 10 V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A (Tc)
- Datasheets
- FQD4N50TF

MOSFET (Metal Oxide) N-Channel 2.7Ohm @ 1.3A, 10V ±30V 460 pF @ 25 V 13 nC @ 10 V 500 V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N50TF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 460 pF @ 25 V.The transistor must receive a 500 V drain to source voltage (Vdss) in order to function.
FQD4N50TF Features
a 500 V drain to source voltage (Vdss)
FQD4N50TF Applications
There are a lot of Fairchild Semiconductor
FQD4N50TF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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