FQD4N25TM
- Mfr.Part #
- FQD4N25TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 3A DPAK
- Stock
- 2,500
- In Stock :
- 2,500
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 22 ns
- Rds On (Max) @ Id, Vgs :
- 1.75 Ω @ 1.5A, 10V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 1.75Ohm
- Avalanche Energy Rating (Eas) :
- 52 mJ
- Turn On Delay Time :
- 6.8 ns
- Series :
- QFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- JEDEC-95 Code :
- TO-252AA
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Factory Lead Time :
- 4 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn-Off Delay Time :
- 6.4 ns
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 3A
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 250V
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Rise Time :
- 45ns
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 3A
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta 37W Tc
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Weight :
- 260.37mg
- Datasheets
- FQD4N25TM

N-Channel Tape & Reel (TR) 1.75 Ω @ 1.5A, 10V ±30V 200pF @ 25V 5.6nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N25TM-WS Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 52 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 6.4 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQD4N25TM-WS Features
the avalanche energy rating (Eas) is 52 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 6.4 ns
FQD4N25TM-WS Applications
There are a lot of ON Semiconductor
FQD4N25TM-WS applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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