FQD4N25TM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Turn-Off Delay Time :

6.4 ns

Avalanche Energy Rating (Eas) :

52 mJ

Rds On (Max) @ Id, Vgs :

1.75 Ω @ 1.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5W

Pbfree Code :

yes

Case Connection :

DRAIN

FET Type :

N-Channel

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Drain Current-Max (Abs) (ID) :

3A

Weight :

260.37mg

Number of Terminations :

2

Transistor Application :

SWITCHING

Series :

QFET®

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Turn On Delay Time :

6.8 ns

Power Dissipation-Max :

2.5W Ta 37W Tc

Rise Time :

45ns

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Tin (Sn)

Resistance :

1.75Ohm

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

22 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A Tc