FQD4N50TM
- Mfr.Part #
- FQD4N50TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.6A DPAK
- Stock
- 5,452
- In Stock :
- 5,452
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.3A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Series :
- QFET®
- Pin Count :
- 3
- Datasheets
- FQD4N50TM

N-Channel Tape & Reel (TR) 2.7 Ω @ 1.3A, 10V ±30V 460pF @ 25V 13nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N50TM Overview
A device's maximal input capacitance is 460pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQD4N50TM Features
a 500V drain to source voltage (Vdss)
FQD4N50TM Applications
There are a lot of Rochester Electronics, LLC
FQD4N50TM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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