FQD4N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Number of Pins :

3

Pbfree Code :

yes

Rise Time :

50ns

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.5A, 10V

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Resistance :

1.4Ohm

Current Rating :

3A

Voltage - Rated DC :

200V

Lead Free :

Lead Free

Turn-Off Delay Time :

7 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

2.5W Ta 30W Tc

Continuous Drain Current (ID) :

3A

Series :

QFET®

Number of Terminations :

2

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

52 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

FET Type :

N-Channel

Turn On Delay Time :

7 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

3A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Weight :

260.37mg

Drain to Source Breakdown Voltage :

200V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

3A Tc