FQD4N20TM
- Mfr.Part #
- FQD4N20TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3A DPAK
- Stock
- 4,893
- In Stock :
- 4,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 1.5A, 10V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 200V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 200V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 260.37mg
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 3A
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Avalanche Energy Rating (Eas) :
- 52 mJ
- Resistance :
- 1.4Ohm
- Power Dissipation-Max :
- 2.5W Ta 30W Tc
- Turn On Delay Time :
- 7 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 7 ns
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Current Rating :
- 3A
- Rise Time :
- 50ns
- Power Dissipation :
- 2.5W
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- QFET®
- Fall Time (Typ) :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 3A
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 6.5nC @ 10V
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Datasheets
- FQD4N20TM
FQD4N20TM Documents

N-Channel Tape & Reel (TR) 1.4 Ω @ 1.5A, 10V ±30V 220pF @ 25V 6.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N20TM Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 52 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 220pF @ 25V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
FQD4N20TM Features
the avalanche energy rating (Eas) is 52 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 7 ns
FQD4N20TM Applications
There are a lot of ON Semiconductor
FQD4N20TM applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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