FQD4N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

25 ns

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Packaging :

Tape and Reel (TR)

Series :

QFET®

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.5A, 10V

Mounting Type :

Surface Mount

Number of Terminations :

2

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Drain to Source Breakdown Voltage :

200V

Terminal Form :

Gull wing

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Resistance :

1.4Ohm

Rise Time :

50ns

Power Dissipation-Max :

2.5W Ta 30W Tc

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

3A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Element Configuration :

Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

7 ns

Pbfree Code :

yes

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

2.5W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Voltage - Rated DC :

200V

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

52 mJ

Turn On Delay Time :

7 ns

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Weight :

260.37mg

Factory Lead Time :

4 Weeks

Vgs (Max) :

±30V

Current Rating :

3A