FQD4N50TM_WS

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Mfr.Part #
FQD4N50TM_WS
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 2.6A DPAK
Stock
5,880
In Stock :
5,880

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2000
Fall Time (Typ) :
30 ns
Turn-Off Delay Time :
20 ns
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
260.37mg
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
Series :
QFET®
Vgs(th) (Max) @ Id :
5V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
2.6A Tc
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
2.7 Ω @ 1.3A, 10V
Rise Time :
45ns
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Continuous Drain Current (ID) :
2.6A
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
2.5W Ta 45W Tc
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
500V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 25V
Vgs (Max) :
±30V
Power Dissipation :
2.5W
Datasheets
FQD4N50TM_WS
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD4N50TM_WS from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FQD4N50TM_WS pinout, FQD4N50TM_WS datasheet PDF, FQD4N50TM_WS amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD4N50TM_WS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD4N50TM_WS


N-Channel Tape & Reel (TR) 2.7 Ω @ 1.3A, 10V ±30V 460pF @ 25V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD4N50TM_WS Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 460pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FQD4N50TM_WS Features


a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 20 ns


FQD4N50TM_WS Applications


There are a lot of ON Semiconductor
FQD4N50TM_WS applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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