FQD4N50TM_WS
- Mfr.Part #
- FQD4N50TM_WS
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.6A DPAK
- Stock
- 5,880
- In Stock :
- 5,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2000
- Fall Time (Typ) :
- 30 ns
- Turn-Off Delay Time :
- 20 ns
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 260.37mg
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Tc
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.3A, 10V
- Rise Time :
- 45ns
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Continuous Drain Current (ID) :
- 2.6A
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 2.5W
- Datasheets
- FQD4N50TM_WS

N-Channel Tape & Reel (TR) 2.7 Ω @ 1.3A, 10V ±30V 460pF @ 25V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N50TM_WS Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 460pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQD4N50TM_WS Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 20 ns
FQD4N50TM_WS Applications
There are a lot of ON Semiconductor
FQD4N50TM_WS applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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