FQD4P40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Radiation Hardening :

No

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

400V

Voltage - Rated DC :

-400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Series :

QFET®

Terminal Form :

Gull wing

Number of Elements :

1

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-400V

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

2.7A

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Turn-Off Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Case Connection :

DRAIN

Element Configuration :

Single

Weight :

260.37mg

Current Rating :

-2.7A

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

3.1 Ω @ 1.35A, 10V

Power Dissipation-Max :

2.5W Ta 50W Tc

Avalanche Energy Rating (Eas) :

260 mJ

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

37 ns

JESD-609 Code :

e3

Turn On Delay Time :

13 ns

Factory Lead Time :

8 Weeks

FET Type :

P-Channel

Rise Time :

55ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Number of Terminations :

2