FQA6N90C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

5V

Package / Case :

TO-3P-3, SC-65-3

Length :

15.8mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

900V

Power Dissipation-Max :

198W Tc

Mount :

Through Hole

Turn-Off Delay Time :

55 ns

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

650 mJ

Packaging :

Tube

Rise Time :

90ns

Height :

18.9mm

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Pbfree Code :

yes

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

Weight :

6.401g

Width :

5mm

Fall Time (Typ) :

60 ns

Pulsed Drain Current-Max (IDM) :

24A

Vgs (Max) :

±30V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Published :

2007

Power Dissipation :

198W

Series :

QFET®