FQA62N25C
- Mfr.Part #
- FQA62N25C
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 62A TO3PN
- Stock
- 3,196
- In Stock :
- 3,196
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Voltage - Rated DC :
- 250V
- Turn On Delay Time :
- 75 ns
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 298W Tc
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 31A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Turn-Off Delay Time :
- 245 ns
- Rise Time :
- 395ns
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 250V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Length :
- 15.8mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6280pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Qualification Status :
- Not Qualified
- Weight :
- 6.401g
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Resistance :
- 35mOhm
- ECCN Code :
- EAR99
- Power Dissipation :
- 298W
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Number of Terminations :
- 3
- Current Rating :
- 62A
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 18.9mm
- Fall Time (Typ) :
- 335 ns
- Continuous Drain Current (ID) :
- 62A
- Published :
- 2013
- Width :
- 5mm
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- QFET®
- Pulsed Drain Current-Max (IDM) :
- 248A
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Datasheets
- FQA62N25C

N-Channel Tube 35m Ω @ 31A, 10V ±30V 6280pF @ 25V 130nC @ 10V TO-3P-3, SC-65-3
Description
The FQA62N25C is a 250V, 62A, 35mΩ N-Channel QFET? MOSFET. The planar, DMOS technology developed by Fairchild is used to create these N-Channel enhancement mode power field-effect transistors.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These components are ideal for switch mode power supply and high-efficiency switching DC/DC converters.
Features
-
Fast switching
-
100% avalanche tested
-
Improved dv/dt capability
-
62A, 250V, RDS(on) = 0.035? @VGS = 10 V, ID = 31A
-
Low gate charge ( typical 100 nC)
-
Low Crss ( typical 63.5 pF)
Applications
-
Automotive electronics
-
As for switching devices in electronic control units
-
As power converters in modern electric vehicles
-
Amplifiers
-
Chopper
-
Linear Voltage Regulators
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