FQA62N25C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

298W

Turn-Off Delay Time :

245 ns

Current Rating :

62A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Rise Time :

395ns

Element Configuration :

Single

Qualification Status :

Not Qualified

Turn On Delay Time :

75 ns

Published :

2013

Number of Elements :

1

Continuous Drain Current (ID) :

62A

Mounting Type :

Through Hole

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Resistance :

35mOhm

Operating Temperature :

-55°C~150°C TJ

Length :

15.8mm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Transistor Element Material :

SILICON

Pbfree Code :

yes

Fall Time (Typ) :

335 ns

Weight :

6.401g

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

6280pF @ 25V

Transistor Application :

SWITCHING

Width :

5mm

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Series :

QFET®

REACH SVHC :

No SVHC

Height :

18.9mm

Number of Terminations :

3

ECCN Code :

EAR99

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

248A

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

35m Ω @ 31A, 10V

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

Vgs (Max) :

±30V

Voltage - Rated DC :

250V

Drain to Source Breakdown Voltage :

250V

Power Dissipation-Max :

298W Tc