FQA6N80

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Pulsed Drain Current-Max (IDM) :

25.2A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 3.15A, 10V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

6.3A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Power Dissipation-Max :

185W Tc

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Position :

Single

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1.5pF @ 25V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

Not Applicable

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Avalanche Energy Rating (Eas) :

680 mJ

Vgs (Max) :

±30V

Package / Case :

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id :

5V @ 250μA