FQA65N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

640ns

Voltage - Rated DC :

200V

Continuous Drain Current (ID) :

65A

Threshold Voltage :

5V

Package / Case :

TO-3P-3, SC-65-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Length :

15.8mm

Lead Free :

Lead Free

Power Dissipation-Max :

310W Tc

Mounting Type :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

200V

Width :

5mm

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Published :

2001

REACH SVHC :

No SVHC

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Turn On Delay Time :

120 ns

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Pbfree Code :

yes

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

32m Ω @ 32.5A, 10V

ECCN Code :

EAR99

Vgs (Max) :

±30V

Mount :

Through Hole

Height :

18.9mm

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Packaging :

Tube

Turn-Off Delay Time :

340 ns

Number of Elements :

1

Radiation Hardening :

No

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Weight :

6.401g

Power Dissipation :

310W

Fall Time (Typ) :

275 ns

Pulsed Drain Current-Max (IDM) :

260A

Current Rating :

65A