FQA6N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Power Dissipation (Max) :

198W (Tc)

FET Feature :

-

Package :

Tube

Series :

QFET®

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-3P-3, SC-65-3

Supplier Device Package :

TO-3P

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

52 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

6.4A (Tc)

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

900 V

Input Capacitance (Ciss) (Max) @ Vds :

1880 pF @ 25 V

Product Status :

Obsolete

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

1.9Ohm @ 3.2A, 10V

FET Type :

N-Channel