FQA6N70

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

152W Tc

Drain Current-Max (Abs) (ID) :

6.4A

Number of Terminations :

3

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

700V

Package / Case :

TO-3P-3, SC-65-3

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

700V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

25.6A

Pin Count :

3

Packaging :

Tube

Mounting Type :

Through Hole

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

6.4A Tc

Peak Reflow Temperature (Cel) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.2A, 10V

Series :

QFET®

Surface Mount :

No

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 25V

Pbfree Code :

yes

Number of Elements :

1

Avalanche Energy Rating (Eas) :

600 mJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Qualification Status :

COMMERCIAL