FQA6N70
- Mfr.Part #
- FQA6N70
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 6.4A TO3P
- Stock
- 900
- In Stock :
- 900
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 3.2A, 10V
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Qualification Status :
- COMMERCIAL
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 25.6A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 700V
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.4pF @ 25V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 6.4A Tc
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 700V
- Power Dissipation-Max :
- 152W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Pin Count :
- 3
- Surface Mount :
- No
- Series :
- QFET®
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-3P-3, SC-65-3
- Drain Current-Max (Abs) (ID) :
- 6.4A
- Terminal Finish :
- MATTE TIN
- Datasheets
- FQA6N70

N-Channel Tube 1.5 Ω @ 3.2A, 10V ±30V 1.4pF @ 25V 40nC @ 10V 700V TO-3P-3, SC-65-3
FQA6N70 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 600 mJ.A device's maximal input capacitance is 1.4pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 6.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 25.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 700V.This transistor requires a 700V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQA6N70 Features
the avalanche energy rating (Eas) is 600 mJ
based on its rated peak drain current 25.6A.
a 700V drain to source voltage (Vdss)
FQA6N70 Applications
There are a lot of Rochester Electronics, LLC
FQA6N70 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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