FQA6N70

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

25.6A

Power Dissipation-Max :

152W Tc

Package / Case :

TO-3P-3, SC-65-3

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Reach Compliance Code :

Unknown

Packaging :

Tube

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-609 Code :

e3

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

700V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Avalanche Energy Rating (Eas) :

600 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

6.4A

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.2A, 10V

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain to Source Voltage (Vdss) :

700V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

6.4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 25V