FQA6N70

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

6.4A Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

600 mJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

152W Tc

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

700V

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

25.6A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Pbfree Code :

yes

DS Breakdown Voltage-Min :

700V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 25V

Number of Elements :

1

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Packaging :

Tube

Qualification Status :

COMMERCIAL

Package / Case :

TO-3P-3, SC-65-3

Drain Current-Max (Abs) (ID) :

6.4A