FQA6N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

800V

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

25.2A

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 3.15A, 10V

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Power Dissipation-Max :

185W Tc

Number of Elements :

1

Avalanche Energy Rating (Eas) :

680 mJ

Number of Terminations :

3

Terminal Position :

Single

Series :

QFET®

Drain Current-Max (Abs) (ID) :

6.3A

Package / Case :

TO-3P-3, SC-65-3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

1.5pF @ 25V

FET Type :

N-Channel

Transistor Element Material :

SILICON