FQA65N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2001

Pulsed Drain Current-Max (IDM) :

260A

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Turn-Off Delay Time :

340 ns

Continuous Drain Current (ID) :

65A

Rds On (Max) @ Id, Vgs :

32m Ω @ 32.5A, 10V

Current Rating :

65A

JESD-609 Code :

e3

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Number of Elements :

1

Weight :

6.401g

FET Type :

N-Channel

Threshold Voltage :

5V

Voltage - Rated DC :

200V

Mount :

Through Hole

Number of Pins :

3

Packaging :

Tube

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation-Max :

310W Tc

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-3P-3, SC-65-3

Factory Lead Time :

4 Weeks

Turn On Delay Time :

120 ns

REACH SVHC :

No SVHC

Pbfree Code :

yes

Fall Time (Typ) :

275 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Length :

15.8mm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Rise Time :

640ns

Gate to Source Voltage (Vgs) :

30V

Height :

18.9mm

Power Dissipation :

310W

Mounting Type :

Through Hole

Width :

5mm

Radiation Hardening :

No

Vgs (Max) :

±30V