FQA65N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Threshold Voltage :

5V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

65A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

275 ns

Pulsed Drain Current-Max (IDM) :

260A

Weight :

6.401g

Transistor Application :

SWITCHING

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Rise Time :

640ns

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Voltage - Rated DC :

200V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

32m Ω @ 32.5A, 10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Radiation Hardening :

No

Mount :

Through Hole

Lead Free :

Lead Free

Package / Case :

TO-3P-3, SC-65-3

Height :

18.9mm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Width :

5mm

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Series :

QFET®

Vgs (Max) :

±30V

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

Power Dissipation :

310W

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Published :

2001

Turn-Off Delay Time :

340 ns

Power Dissipation-Max :

310W Tc

Length :

15.8mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

65A

Number of Pins :

3

Turn On Delay Time :

120 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole