FQA65N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-3P-3, SC-65-3

Height :

18.9mm

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

310W Tc

Number of Pins :

3

Turn-Off Delay Time :

340 ns

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Current Rating :

65A

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

2001

Packaging :

Tube

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

32m Ω @ 32.5A, 10V

Radiation Hardening :

No

Series :

QFET®

Transistor Application :

SWITCHING

Weight :

6.401g

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

5V @ 250μA

Length :

15.8mm

Pbfree Code :

yes

Vgs (Max) :

±30V

Element Configuration :

Single

REACH SVHC :

No SVHC

Power Dissipation :

310W

Pulsed Drain Current-Max (IDM) :

260A

Lead Free :

Lead Free

JESD-609 Code :

e3

Mount :

Through Hole

Voltage - Rated DC :

200V

Number of Terminations :

3

Continuous Drain Current (ID) :

65A

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

200V

Turn On Delay Time :

120 ns

ECCN Code :

EAR99

Number of Elements :

1

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Fall Time (Typ) :

275 ns

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Rise Time :

640ns

Width :

5mm

Operating Temperature :

-55°C~150°C TJ