FQA65N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

310W Tc

Radiation Hardening :

No

FET Type :

N-Channel

Voltage - Rated DC :

200V

Weight :

6.401g

Turn On Delay Time :

120 ns

Current Rating :

65A

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Height :

18.9mm

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

260A

Number of Terminations :

3

Fall Time (Typ) :

275 ns

Lead Free :

Lead Free

Turn-Off Delay Time :

340 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Rise Time :

640ns

Power Dissipation :

310W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Element Configuration :

Single

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Published :

2001

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

32m Ω @ 32.5A, 10V

Continuous Drain Current (ID) :

65A

Package / Case :

TO-3P-3, SC-65-3

Drain to Source Breakdown Voltage :

200V

Length :

15.8mm

Mounting Type :

Through Hole

Packaging :

Tube

Transistor Application :

SWITCHING

Width :

5mm

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Number of Pins :

3

REACH SVHC :

No SVHC