FQA65N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

183W Tc

Published :

2001

Packaging :

Tube

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

TO-3P

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Series :

QFET®

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

16mOhm @ 36A, 10V

Package / Case :

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id :

4V @ 250µA