FQA19N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Series :

QFET®

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Continuous Drain Current (ID) :

18.5A

Width :

5mm

Published :

2000

Number of Elements :

1

Package / Case :

TO-3P-3, SC-65-3

Rise Time :

210ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Height :

18.9mm

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Pbfree Code :

yes

ECCN Code :

EAR99

Radiation Hardening :

No

Power Dissipation :

300W

Transistor Element Material :

SILICON

Current :

16A

Threshold Voltage :

5V

Current Rating :

18.5A

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1150 mJ

Turn-Off Delay Time :

150 ns

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Voltage - Rated DC :

600V

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Number of Pins :

3

Voltage :

600V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Turn On Delay Time :

65 ns

Fall Time (Typ) :

135 ns

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

REACH SVHC :

No SVHC

Length :

15.8mm

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

380m Ω @ 9.3A, 10V