FQA19N60

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Mfr.Part #
FQA19N60
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 18.5A TO3PN
Stock
4,003
In Stock :
4,003

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Power Dissipation-Max :
300W Tc
Current Rating :
18.5A
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Number of Terminations :
3
Mount :
Through Hole
Height :
18.9mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Voltage :
600V
RoHS Status :
ROHS3 Compliant
Rise Time :
210ns
Rds On (Max) @ Id, Vgs :
380m Ω @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Transistor Application :
SWITCHING
Turn-Off Delay Time :
150 ns
Transistor Element Material :
SILICON
Power Dissipation :
300W
Package / Case :
TO-3P-3, SC-65-3
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Threshold Voltage :
5V
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 250μA
Voltage - Rated DC :
600V
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
18.5A
Current - Continuous Drain (Id) @ 25°C :
18.5A Tc
Series :
QFET®
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current :
16A
Width :
5mm
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
FET Type :
N-Channel
HTS Code :
8541.29.00.95
Lead Free :
Lead Free
Radiation Hardening :
No
Pbfree Code :
yes
Length :
15.8mm
Avalanche Energy Rating (Eas) :
1150 mJ
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Fall Time (Typ) :
135 ns
Vgs (Max) :
±30V
Drain to Source Breakdown Voltage :
600V
Turn On Delay Time :
65 ns
REACH SVHC :
No SVHC
Factory Lead Time :
4 Weeks
Published :
2000
Datasheets
FQA19N60
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA19N60 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Voltage:600V, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, FQA19N60 pinout, FQA19N60 datasheet PDF, FQA19N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA19N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA19N60


N-Channel Tube 380m Ω @ 9.3A, 10V ±30V 3600pF @ 25V 90nC @ 10V TO-3P-3, SC-65-3

FQA19N60 Description


FQA19N60 is a type of N-channel QFET? MOSFET that is manufactured by ON Semiconductor based on the proprietary planar stripe and DMOS technology. On the basis of this technology, low on-state resistance, advanced switching performance, and high avalanche energy strength can be ensured. FQA19N60 is well suited for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.



FQA19N60 Features


  • Low on-state resistance

  • Advanced switching performance

  • High avalanche energy strength

  • Available in the TO-3PN package

  • Proprietary planar stripe and DMOS technology



FQA19N60 Applications


  • Electronic lamp ballasts

  • Switched-mode power supplies

  • Active power factor correction (PFC)


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