FQA19N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

18.5A

Power Dissipation :

300W

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

135 ns

Height :

18.9mm

Element Configuration :

Single

Turn-Off Delay Time :

150 ns

Threshold Voltage :

5V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Published :

2000

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

JESD-609 Code :

e3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

1150 mJ

Mounting Type :

Through Hole

Number of Pins :

3

Rise Time :

210ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Current Rating :

18.5A

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

ECCN Code :

EAR99

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Width :

5mm

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Length :

15.8mm

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Voltage - Rated DC :

600V

Current :

16A

HTS Code :

8541.29.00.95

Power Dissipation-Max :

300W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

FET Type :

N-Channel

Turn On Delay Time :

65 ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 9.3A, 10V