FQA19N60
- Mfr.Part #
- FQA19N60
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 4,003
- In Stock :
- 4,003
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Threshold Voltage :
- 5V
- Power Dissipation-Max :
- 300W Tc
- Fall Time (Typ) :
- 135 ns
- Current :
- 16A
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 18.5A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 18.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 5mm
- Height :
- 18.9mm
- Published :
- 2000
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 9.3A, 10V
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 150 ns
- Current Rating :
- 18.5A
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Series :
- QFET®
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 1150 mJ
- Power Dissipation :
- 300W
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Packaging :
- Tube
- Turn On Delay Time :
- 65 ns
- ECCN Code :
- EAR99
- Rise Time :
- 210ns
- Length :
- 15.8mm
- Operating Mode :
- ENHANCEMENT MODE
- HTS Code :
- 8541.29.00.95
- Voltage :
- 600V
- Datasheets
- FQA19N60

N-Channel Tube 380m Ω @ 9.3A, 10V ±30V 3600pF @ 25V 90nC @ 10V TO-3P-3, SC-65-3
FQA19N60 Description
FQA19N60 is a type of N-channel QFET? MOSFET that is manufactured by ON Semiconductor based on the proprietary planar stripe and DMOS technology. On the basis of this technology, low on-state resistance, advanced switching performance, and high avalanche energy strength can be ensured. FQA19N60 is well suited for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA19N60 Features
-
Low on-state resistance
-
Advanced switching performance
-
High avalanche energy strength
-
Available in the TO-3PN package
-
Proprietary planar stripe and DMOS technology
FQA19N60 Applications
-
Electronic lamp ballasts
-
Switched-mode power supplies
-
Active power factor correction (PFC)
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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