FQA18N50V2

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

80A

Power Dissipation-Max :

277W Tc

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-3P-3, SC-65-3

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

500V

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.265Ohm

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

330 mJ

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3.29pF @ 25V

Rds On (Max) @ Id, Vgs :

265m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

20A

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500V

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single