FQA18N50V2

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.265Ohm

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

20A

Power Dissipation-Max :

277W Tc

Package / Case :

TO-3P-3, SC-65-3

FET Type :

N-Channel

JESD-609 Code :

e3

Series :

QFET®

Surface Mount :

No

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

330 mJ

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Terminal Position :

Single

DS Breakdown Voltage-Min :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

80A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

3.29pF @ 25V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

265m Ω @ 10A, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable