FQA17N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

17.2A

Power Dissipation-Max :

190W Tc

Current - Continuous Drain (Id) @ 25°C :

17.2A Tc

Transistor Application :

SWITCHING

Pbfree Code :

yes

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs (Max) :

±30V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

270m Ω @ 8.6A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

Series :

QFET®

Peak Reflow Temperature (Cel) :

Not Applicable

DS Breakdown Voltage-Min :

400V

Pin Count :

3

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

68.8A

Reach Compliance Code :

Unknown

Number of Elements :

1

Package / Case :

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

1000 mJ

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

2.3pF @ 25V

Drain-source On Resistance-Max :

0.27Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

400V

Mounting Type :

Through Hole

Packaging :

Tube