FQA170N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

680A

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

260 ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

60V

Length :

15.8mm

Height :

18.9mm

Factory Lead Time :

4 Weeks

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

170A

Element Configuration :

Single

Current Rating :

170A

Rise Time :

700ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Weight :

6.401g

Resistance :

5.6MOhm

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 85A, 10V

Radiation Hardening :

No

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Lead Free :

Lead Free

Threshold Voltage :

4V

JESD-609 Code :

e3

Power Dissipation :

375W

Avalanche Energy Rating (Eas) :

990 mJ

Power Dissipation-Max :

375W Tc

Published :

2001

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Terminations :

3

Width :

5mm

Operating Temperature :

-55°C~175°C TJ

Series :

QFET®

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

9350pF @ 25V

Package / Case :

TO-3P-3, SC-65-3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

430 ns

FET Type :

N-Channel

REACH SVHC :

No SVHC

Turn On Delay Time :

85 ns

Vgs(th) (Max) @ Id :

4V @ 250µA