FQA170N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

18.9mm

FET Type :

N-Channel

Resistance :

5.6MOhm

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

680A

Radiation Hardening :

No

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

25V

Length :

15.8mm

Series :

QFET®

Current Rating :

170A

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

375W Tc

Power Dissipation :

375W

Input Capacitance (Ciss) (Max) @ Vds :

9350pF @ 25V

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Turn-Off Delay Time :

260 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

170A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 85A, 10V

Vgs (Max) :

±25V

Rise Time :

700ns

Factory Lead Time :

4 Weeks

Packaging :

Tube

JESD-609 Code :

e3

Weight :

6.401g

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Width :

5mm

Turn On Delay Time :

85 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Number of Pins :

3

Published :

2001

Voltage - Rated DC :

60V

Mount :

Through Hole

Threshold Voltage :

4V

Fall Time (Typ) :

430 ns

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Package / Case :

TO-3P-3, SC-65-3

Avalanche Energy Rating (Eas) :

990 mJ

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Operating Mode :

ENHANCEMENT MODE