FQA170N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Length :

15.8mm

Number of Elements :

1

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Number of Pins :

3

ECCN Code :

EAR99

Width :

5mm

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

25V

Rise Time :

700ns

FET Type :

N-Channel

Lead Free :

Lead Free

Published :

2001

Package / Case :

TO-3P-3, SC-65-3

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Current Rating :

170A

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Series :

QFET®

Number of Terminations :

3

Element Configuration :

Single

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Fall Time (Typ) :

430 ns

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Power Dissipation-Max :

375W Tc

Continuous Drain Current (ID) :

170A

Weight :

6.401g

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 85A, 10V

Turn-Off Delay Time :

260 ns

Power Dissipation :

375W

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Input Capacitance (Ciss) (Max) @ Vds :

9350pF @ 25V

Drain to Source Breakdown Voltage :

60V

Height :

18.9mm

Resistance :

5.6MOhm

Packaging :

Tube

Threshold Voltage :

4V

Pulsed Drain Current-Max (IDM) :

680A

Turn On Delay Time :

85 ns

Avalanche Energy Rating (Eas) :

990 mJ

Terminal Finish :

Tin (Sn)