FQA16N50

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.32Ohm

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

16A

Reach Compliance Code :

Unknown

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-3P-3, SC-65-3

Number of Elements :

1

Series :

QFET®

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

16A Tc

DS Breakdown Voltage-Min :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

980 mJ

Power Dissipation-Max :

200W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

64A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Pin Count :

3

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 25V

Rds On (Max) @ Id, Vgs :

320m Ω @ 8A, 10V

Packaging :

Tube

Transistor Element Material :

SILICON