FQA16N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

320m Ω @ 8A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Power Dissipation-Max :

200W Tc

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Package / Case :

TO-3P-3, SC-65-3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Qualification Status :

COMMERCIAL

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Vgs (Max) :

±30V

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

16A

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Position :

Single

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Number of Elements :

1

Packaging :

Tube

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

64A

Avalanche Energy Rating (Eas) :

980 mJ

Drain-source On Resistance-Max :

0.32Ohm

Pbfree Code :

yes

Number of Terminations :

3