FQA16N25C
- Mfr.Part #
- FQA16N25C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 17.8A TO3P
- Stock
- 12,332
- In Stock :
- 12,332
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 17.8A
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 250V
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 53.5nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 71.2A
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 17.8A Tc
- Power Dissipation-Max :
- 180W Tc
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 410 mJ
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 8.9A, 10V
- Package / Case :
- TO-3P-3, SC-65-3
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.27Ohm
- Drain to Source Voltage (Vdss) :
- 250V
- Series :
- QFET®
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.08pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Datasheets
- FQA16N25C

N-Channel Tube 270m Ω @ 8.9A, 10V ±30V 1.08pF @ 25V 53.5nC @ 10V 250V TO-3P-3, SC-65-3
FQA16N25C Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 410 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.08pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 17.8A.Peak drain current is 71.2A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQA16N25C Features
the avalanche energy rating (Eas) is 410 mJ
based on its rated peak drain current 71.2A.
a 250V drain to source voltage (Vdss)
FQA16N25C Applications
There are a lot of Rochester Electronics, LLC
FQA16N25C applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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