FQA14N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

600 mJ

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Pin Count :

3

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Position :

Single

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

15A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Series :

QFET®

DS Breakdown Voltage-Min :

300V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

160W Tc

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.5A, 10V

Drain to Source Voltage (Vdss) :

300V

Package / Case :

TO-3P-3, SC-65-3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1.36pF @ 25V

Drain-source On Resistance-Max :

0.29Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

60A

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V