FQA14N30
- Mfr.Part #
- FQA14N30
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 15A TO3P
- Stock
- 230
- In Stock :
- 230
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 7.5A, 10V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-3P-3, SC-65-3
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.29Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Terminal Finish :
- MATTE TIN
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.36pF @ 25V
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Reach Compliance Code :
- Unknown
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Pulsed Drain Current-Max (IDM) :
- 60A
- DS Breakdown Voltage-Min :
- 300V
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 15A
- Drain to Source Voltage (Vdss) :
- 300V
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Power Dissipation-Max :
- 160W Tc
- Datasheets
- FQA14N30

N-Channel Tube 290m Ω @ 7.5A, 10V ±30V 1.36pF @ 25V 40nC @ 10V 300V TO-3P-3, SC-65-3
FQA14N30 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 600 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.36pF @ 25V.15A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
FQA14N30 Features
the avalanche energy rating (Eas) is 600 mJ
based on its rated peak drain current 60A.
a 300V drain to source voltage (Vdss)
FQA14N30 Applications
There are a lot of Rochester Electronics, LLC
FQA14N30 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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