FQA14N30
- Mfr.Part #
- FQA14N30
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 15A TO3P
- Stock
- 230
- In Stock :
- 230
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 15A
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- DS Breakdown Voltage-Min :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- Series :
- QFET®
- Pulsed Drain Current-Max (IDM) :
- 60A
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 7.5A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.29Ohm
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 300V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Surface Mount :
- No
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 160W Tc
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.36pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- FQA14N30

N-Channel Tube 290m Ω @ 7.5A, 10V ±30V 1.36pF @ 25V 40nC @ 10V 300V TO-3P-3, SC-65-3
FQA14N30 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 600 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.36pF @ 25V.15A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 60A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
FQA14N30 Features
the avalanche energy rating (Eas) is 600 mJ
based on its rated peak drain current 60A.
a 300V drain to source voltage (Vdss)
FQA14N30 Applications
There are a lot of Rochester Electronics, LLC
FQA14N30 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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