FQA140N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5mm

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Power Dissipation :

375W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

7900pF @ 25V

Turn On Delay Time :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Weight :

6.401g

Voltage - Rated DC :

100V

Pulsed Drain Current-Max (IDM) :

560A

Published :

2013

REACH SVHC :

No SVHC

Current Rating :

140A

Rise Time :

940ns

JESD-609 Code :

e3

Number of Pins :

3

Package / Case :

TO-3P-3, SC-65-3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Turn-Off Delay Time :

350 ns

Resistance :

10MOhm

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

Height :

18.9mm

Number of Terminations :

3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

10m Ω @ 70A, 10V

ECCN Code :

EAR99

Threshold Voltage :

4V

Number of Elements :

1

Continuous Drain Current (ID) :

140A

Factory Lead Time :

9 Weeks

Vgs (Max) :

±25V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Power Dissipation-Max :

375W Tc

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Length :

15.8mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Fall Time (Typ) :

360 ns