FQA13N80-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-3P-3, SC-65-3

Rise Time :

150ns

Weight :

6.401g

Height :

18.9mm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

50.4A

Drain-source On Resistance-Max :

0.75Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

12.6A Tc

Rds On (Max) @ Id, Vgs :

750m Ω @ 6.3A, 10V

Turn-Off Delay Time :

155 ns

Threshold Voltage :

5V

Length :

15.8mm

Transistor Element Material :

SILICON

Turn On Delay Time :

60 ns

Drain to Source Breakdown Voltage :

800V

Width :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Pins :

3

FET Type :

N-Channel

Qualification Status :

Not Qualified

Mount :

Through Hole

Element Configuration :

Single

Vgs (Max) :

±30V

Fall Time (Typ) :

110 ns

Continuous Drain Current (ID) :

12.6A

RoHS Status :

ROHS3 Compliant

Power Dissipation :

300W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Power Dissipation-Max :

300W Tc