FQA13N50CF
- Mfr.Part #
- FQA13N50CF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A TO3PN
- Stock
- 9,363
- In Stock :
- 9,363
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 480mOhm
- Continuous Drain Current (ID) :
- 15A
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Turn-Off Delay Time :
- 130 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2055pF @ 25V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Package / Case :
- TO-3P-3, SC-65-3
- Power Dissipation :
- 218W
- Gate to Source Voltage (Vgs) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Mount :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 100ns
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 480m Ω @ 7.5A, 10V
- Width :
- 5mm
- Weight :
- 6.401g
- Number of Terminations :
- 3
- Series :
- FRFET®
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 218W Tc
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 25 ns
- Drain to Source Breakdown Voltage :
- 500V
- Published :
- 2013
- Element Configuration :
- Single
- Height :
- 20.1mm
- Additional Feature :
- FAST SWITCHING
- Number of Elements :
- 1
- Fall Time (Typ) :
- 100 ns
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 15.8mm
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 60A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 860 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Datasheets
- FQA13N50CF

N-Channel Tube 480m Ω @ 7.5A, 10V ±30V 2055pF @ 25V 56nC @ 10V TO-3P-3, SC-65-3
FQA13N50CF Description
FQA13N50CF is a 500V N-Channel QFET?, FRFET? Power MOSFET. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET FQA13N50CF has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The FQA13N50CF is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA13N50CF Features
-
15A, 500V
-
RDS(on) = 480mΩ(Max.) @ VGS = 10 V, ID = 7.5A
-
Low gate charge ( Typ. 43nC)
-
Low Crss ( Typ. 20pF)
-
100% avalanche tested
-
Fast recovery body diode (Typ. 100ns)
FQA13N50CF Applications
-
AC-DC Merchant Power Supply - Servers & Workstations
-
Workstation
-
Server & Mainframe
-
Desktop PC
-
AC-DC Merchant Power Supply - Desktop PC
-
Switched Mode Power Supplies
-
Active Power Factor Correction (PFC)
-
Electronic Lamp Ballasts
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