FQA13N50C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max :

218W Tc

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

Resistance :

480mOhm

Turn-Off Delay Time :

130 ns

Power Dissipation :

218W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Series :

FRFET®

Fall Time (Typ) :

100 ns

Rds On (Max) @ Id, Vgs :

480m Ω @ 7.5A, 10V

Length :

15.8mm

Mounting Type :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Turn On Delay Time :

25 ns

Rise Time :

100ns

Avalanche Energy Rating (Eas) :

860 mJ

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Continuous Drain Current (ID) :

15A

Width :

5mm

JESD-609 Code :

e3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

3

Element Configuration :

Single

Weight :

6.401g

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

FAST SWITCHING

Height :

20.1mm

Packaging :

Tube

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V