FQA12P20

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Mfr.Part #
FQA12P20
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET P-CH 200V 12.6A TO3P
Stock
26,336
In Stock :
26,336

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
200V
Turn-Off Delay Time :
40 ns
Supplier Device Package :
TO-3P
Power Dissipation-Max :
150W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
-200V
Number of Pins :
3
RoHS Status :
RoHS Compliant
Lead Free :
Lead Free
Packaging :
Tube
Continuous Drain Current (ID) :
12.6A
Rise Time :
195ns
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Input Capacitance :
1.2nF
Element Configuration :
Single
Max Operating Temperature :
150°C
Power Dissipation :
150W
Current - Continuous Drain (Id) @ 25°C :
12.6A Tc
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
470mOhm @ 6.3A, 10V
Fall Time (Typ) :
60 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On Max :
470 mΩ
Series :
QFET®
Drain to Source Resistance :
470mOhm
Voltage - Rated DC :
-200V
Current Rating :
-12.6A
FET Type :
P-Channel
Package / Case :
TO-3P-3, SC-65-3
Vgs (Max) :
±30V
Mount :
Through Hole
Published :
2000
Gate to Source Voltage (Vgs) :
30V
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Datasheets
FQA12P20
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA12P20 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, FQA12P20 pinout, FQA12P20 datasheet PDF, FQA12P20 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA12P20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA12P20


P-Channel Tube 470mOhm @ 6.3A, 10V ±30V 1200pF @ 25V 40nC @ 10V 200V TO-3P-3, SC-65-3

FQA12P20 Description


The FQA12P20 P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. 



FQA12P20 Features


  • 100% avalanche tested

  • RoHS Compliant

  • -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A

  • Low gate charge ( Typ. 31nC)

  • Low Crss ( Typ. 30pF)



FQA12P20 Applications


  • Other Industrial


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