FGH40T65UPD
- Mfr.Part #
- FGH40T65UPD
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT TRENCH/FS 650V 80A TO247-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Turn Off Time-Nom (toff) :
- 213 ns
- Test Condition :
- 400V, 40A, 7 Ω, 15V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Td (on/off) @ 25°C :
- 20ns/144ns
- Number of Terminations :
- 3
- Length :
- 15.87mm
- Transistor Application :
- POWER CONTROL
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 50 Weeks
- Turn On Time :
- 57 ns
- Max Collector Current :
- 80A
- Width :
- 4.82mm
- IGBT Type :
- Trench Field Stop
- Packaging :
- Tube
- Mount :
- Through Hole
- Switching Energy :
- 1.59mJ (on), 580μJ (off)
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reverse Recovery Time :
- 43 ns
- Height :
- 20.82mm
- Case Connection :
- COLLECTOR
- Gate Charge :
- 177nC
- Input Type :
- Standard
- JESD-609 Code :
- e3
- Package / Case :
- TO-247-3
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 40A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 2.1V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 650V
- Contact Plating :
- Tin
- HTS Code :
- 8541.29.00.95
- JEDEC-95 Code :
- TO-247AB
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Weight :
- 6.39g
- Collector Emitter Voltage (VCEO) :
- 650V
- Max Power Dissipation :
- 268W
- Gate-Emitter Voltage-Max :
- 20V
- Fall Time-Max (tf) :
- 22ns
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- Power - Max :
- 268W
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 7.5V
- Current - Collector Pulsed (Icm) :
- 120A
- Datasheets
- FGH40T65UPD

FGH40T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
Description
The FGH40T65UPD is a 650 V, 40 A Field Stop Trench IGBT. ON Semiconductor's new series of field stop trench IGBTs uses novel field stop trench IGBT technology to provide optimum performance for solar inverters, UPS, welders, and digital power generators where low conduction and switching losses are critical.
Features
-
Tightened Parameter Distribution
-
Short Circuit Ruggedness > 5 μs @ 25°C
-
This Device is Pb?Free and is RoHS Compliant
-
Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A
-
100% of Parts Tested ILM
-
High Input Impedance
-
Maximum Junction Temperature: TJ = 175°C
-
Positive Temperature Co?efficient for Easy Parallel Operating
-
High Current Capability
Applications
-
Solar Inverter, UPS, Welder, Digital Power Generator
-
Telecom, ESS
-
AC and DC Motor Drives Offering Speed Control
-
Chopper and Inverters
-
Solar Inverters
-
SMPS (Switched Mode Power Supply)
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