FGH40T65UPD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

7.5V

Gate Charge :

177nC

Contact Plating :

Tin

Mount :

Through Hole

Weight :

6.39g

Polarity/Channel Type :

N-Channel

Fall Time-Max (tf) :

22ns

Current - Collector Pulsed (Icm) :

120A

Power - Max :

268W

Turn On Time :

57 ns

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 40A

Test Condition :

400V, 40A, 7 Ω, 15V

Transistor Application :

POWER CONTROL

Element Configuration :

Single

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.82mm

Collector Emitter Saturation Voltage :

2.1V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

IGBT Type :

Trench Field Stop

ECCN Code :

EAR99

Length :

15.87mm

Max Power Dissipation :

268W

Gate-Emitter Voltage-Max :

20V

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

650V

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Packaging :

Tube

JESD-609 Code :

e3

Turn Off Time-Nom (toff) :

213 ns

Input Type :

Standard

Switching Energy :

1.59mJ (on), 580μJ (off)

Td (on/off) @ 25°C :

20ns/144ns

JEDEC-95 Code :

TO-247AB

Collector Emitter Voltage (VCEO) :

650V

Published :

2013

Max Collector Current :

80A

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Number of Terminations :

3

Factory Lead Time :

50 Weeks

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

20.82mm

Lead Free :

Lead Free

Mounting Type :

Through Hole

Reverse Recovery Time :

43 ns

Reach Compliance Code :

not_compliant